Nanya commits $10.7B to EUV DRAM fab as July revenue surges 719% year-on-year

Taiwanese memory maker Nanya Technology has unveiled the largest investment program in its history. The company's board approved up to NT$346.6 billion (around $10.7 billion) for the Fab5A facility spanning 2026 through 2029. The project covers 10 nm-class process nodes from 1b to 1e and introduces extreme ultraviolet (EUV) lithography.

In parallel, Nanya raised its 2026 capital expenditure budget by 34% to NT$69.7 billion (about $2.16 billion). The additional NT$17.7 billion will go toward advance payments for equipment to keep Fab5A on schedule. First wafer starts at the new line are planned for the second half of 2027, ramping to 30,000 wafers per month in 2028 and 35,900 in 2029. The maximum planned capacity is around 45,000 wafers monthly.

Pilot production on the 1c node has already begun, while the 1d node is under development with its pilot run expected shortly. Total investment in Fab5A is estimated at roughly $16 billion once completed, with funds to be deployed in phases based on market demand.

On the commercial side, Nanya is enjoying a strong run. July revenue hit NT$43.87 billion (about $1.3 billion), up 49.3% month-over-month and 719.6% year-over-year, driven by continued DRAM price increases, particularly sharp gains in DDR4 contract prices. A year ago, DDR4 module prices overtook DDR5 for the first time, and Nanya was among the biggest beneficiaries of that shift.

Its customers include NVIDIA, Google, Microsoft, Intel, AMD, and Qualcomm. Long-term agreements now reportedly cover about 50% of production capacity, with short-term contracts gradually being converted into long-term ones, strengthening the Taiwanese company's outlook.