SanDisk builds first 3D Matrix Memory prototypes — targets half the cost and four times the density of DRAM

SanDisk has announced a significant milestone in the development of its experimental 3D Matrix Memory technology: the company has produced the first test chips on standard 300-mm silicon wafers, packaged them, and submitted them for further validation.

The technology, under development since 2017, is positioned as a potential alternative to conventional DRAM, but with a fundamentally different three-dimensional architecture. According to SanDisk, 3D Matrix Memory could eventually deliver performance comparable to DRAM while offering up to four times the storage capacity. The company also aims to cut the cost per bit by half compared to traditional DRAM.

The latest prototypes build on a test vehicle developed last year in collaboration with Imec, SanDisk's research partner. Since then, SanDisk has begun stacking multiple memory layers and manufacturing the experimental chips on 300-mm wafers. The packaged chips are now being used for additional testing. According to the company, the experiments have already demonstrated functioning memory arrays with a capacity of several gigabits. SanDisk also states that the performance level is already very close to the specifications it has set for a potential end product.

However, SanDisk is not yet ready to discuss a commercial launch. Alper Ilkbahar, the company's Chief Technology Officer, noted that 3D Matrix Memory remains a long-term project and that it may be quite some time before the technology reaches the market. The company did not provide a specific timeline for when the memory might become available to customers.